SCOPUS 정보 검색 플랫폼

Electronics Letters

Volumn 31, Issue 18, 1995, Pages 1584-1585

Ultrahigh temperature and ultrahigh speed operation of 1.3 μm strain-compensated AlGaInAs/InP uncooled laser diodes

(4) Wang, M C a Lin, W a Shi, T T a Tu, Y K a

a Ministry of Transportation and Communications Taiwan (Taiwan)

Author keywords

Semiconductor junction lasers; Uncooled laser diodes

Indexed keywords

BANDWIDTH; COSTS; ELECTRIC CURRENTS; HETEROJUNCTIONS; HIGH TEMPERATURE PROPERTIES; REACTIVE ION ETCHING; RELIABILITY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR QUANTUM WELLS; STRAIN; VAPOR PHASE EPITAXY;

MODULATION BANDWIDTH; MULTIPLE QUANTUM WELLS; SEMICONDUCTOR JUNCTION LASERS; THRESHOLD CURRENTS; UNCOOLED LASER DIODES;

SEMICONDUCTOR LASERS;

EID: 0029352856 PISSN: 00135194 EISSN: None Source Type: Journal
DOI: 10.1049/el:19951103 Document Type: Article

Times cited : (38)

References (5)

1
- 0028379805
- High performance uncooled 1.3μm AlxGayIn1-x-yAs/InP strained-layer quantum well lasers for subscriber loop applications
- ZAH C.E., BHAT, R., PATHAK, B., FAVIRE, F., LIN, W., WANG, M.C., ANDREADAKIS, N.C., HWANG D.M., KOZA, M.A., LEE, T.P., WANG, Z., DARBY, D., FLANDERS, D.C., and HSIEH, J.J.: ‘High performance uncooled 1.3μm AlxGayIn1-x-yAs/InP strained-layer quantum well lasers for subscriber loop applications’. IEEE J. Quantum Electron., 1994. QE-30. pp. 511-523
- (1994) IEEE J. Quantum Electron. , vol.QE-30 , pp. 511-523
- ZAH, C.E.¹ BHAT, R.² PATHAK, B.³ FAVIRE, F.⁴ LIN, W.⁵ WANG, M.C.⁶ ANDREADAKIS, N.C.⁷ HWANG, D.M.⁸ KOZA, M.A.⁹ LEE, T.P.¹⁰ WANG, Z.¹¹ DARBY, D.¹² FLANDERS, D.C.¹³ HSIEH, J.J.¹⁴

2
- 0342939251
- High speed, ultra low noise operation from -40°C to 100°C tensile strained InGaAlAs MQW lasers emitting 1300 nm
- Conf. Dig., PD10
- WANG, Z., DARBY, D., PANOCK, R., WHITNEY, P., and FLANDERS. D.C.: ‘High speed, ultra low noise operation from -40°C to 100°C tensile strained InGaAlAs MQW lasers emitting 1300 nm’. Proc. 14th Int. Semiconductor Laser Conf., 1994, Conf. Dig., PD10
- (1994) Proc. 14th Int. Semiconductor Laser Conf.
- WANG, Z.¹ DARBY, D.² PANOCK, R.³ WHITNEY, P.⁴ FLANDERS, D.C.⁵

3
- 0029217595
- High temperature operation of AlGaInAs/InP lasers
- ZAH, C.E., BHAT, R., and LEE, T.P.: ‘High temperature operation of AlGaInAs/InP lasers’. Proc. 7th Int. Conf. on InP and Related Materials. 1995, pp. 14-17
- (1995) Proc. 7th Int. Conf. on InP and Related Materials , pp. 14-17
- ZAH, C.E.¹ BHAT, R.² LEE, T.P.³

4
- 0028721394
- High temperature modulation dynamics of 1.3μm AlxGayIn1-x-yAs/InP strained-layer quantum well lasers
- ZAH. C.E., WANG, M.C., BHAT, R., LEE, T.P., CHUANG, S.L., WANG, Z., DARBY, D., FLANDERS, D.C., and HSIEH, J.J.: ‘High temperature modulation dynamics of 1.3μm AlxGayIn1-x-yAs/InP strained-layer quantum well lasers’. Proc. 14th Int. Semiconductor Laser Conf., 1994, pp. 215-216
- (1994) Proc. 14th Int. Semiconductor Laser Conf. , pp. 215-216
- ZAH, C.E.¹ WANG, M.C.² BHAT, R.³ LEE, T.P.⁴ CHUANG, S.L.⁵ WANG, Z.⁶ DARBY, D.⁷ FLANDERS, D.C.⁸ HSIEH, J.J.⁹

5
- 0023266832
- High speed semiconductor laser design and performance
- BOWERS, J.E.: ‘High speed semiconductor laser design and performance’, Solid-State Electron. 1987. 30. pp. 1-11
- (1987) Solid-State Electron. , vol.30 , pp. 1-11
- BOWERS, J.E.¹

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.