Oxidation behavior of Si-SiC at high temperature

Journal of the Ceramic Society of Japan

Volumn 105, Issue 1, 1997, Pages 15-20

  Nanri, Hayato ^a   Shirai, Mitsuru ^a   Takeuchi, Nobuyuki ^a   Ishida, Shingo ^a   Watanabe, Koji ^b   Wakamatsu, Mitsuru ^b  

^a KYOTO INSTITUTE OF TECHNOLOGY   (Japan)

^b Taiko Refractories Co Ltd   (Japan)

Author keywords

Active oxidation; Carbon migration; Mass spectrometer; Passive oxidation; Si SiC composite

Indexed keywords

CARBON; CARBON DIOXIDE; CARBON MONOXIDE; MASS SPECTROMETERS; MASS TRANSFER; OXIDATION; OXIDATION RESISTANCE; REACTION KINETICS; SILICON; SILICON CARBIDE;

ACTIVE OXIDATION; CONCENTRATION MEASUREMENT; LINEAR PARABOLIC LAW; OXIDATION RATE; OXIDIZABILITY; OXYGEN PARTIAL PRESSURE; PASSIVE OXIDATION; SILICON-SILICON CARBIDE COMPOSITE;

CERAMIC MATRIX COMPOSITES;

EID: 0030780807     PISSN: 09145400     EISSN: None     Source Type: Journal    
DOI: 10.2109/jcersj.105.15     Document Type: Article

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