Oxidation behavior of porous SiC at high temperatures

Journal of the Ceramic Society of Japan

Volumn 104, Issue 8, 1996, Pages 738-742

  Nanri, Hayato ^a   Shirai, Mitsuru ^a   Takeuchi, Nobuyuki ^a   Ishida, Shingo ^a   Watanabe, Koji ^b   Wakamatsu, Mitsuru ^b  

^a KYOTO INSTITUTE OF TECHNOLOGY   (Japan)

^b Taiko Refractories Co Ltd   (Japan)

Author keywords

Active oxidation; Mass spectrometer; Passive oxidation; Porous SiC

Indexed keywords

DENSITY (SPECIFIC GRAVITY); HIGH TEMPERATURE APPLICATIONS; IMPURITIES; MASS SPECTROMETERS; OXIDATION; OXYGEN; POROSITY; POROUS MATERIALS; PRESSURE; REACTION KINETICS; SURFACES;

ACTIVE OXIDATION; CRISTOBALITE; OXIDATION RATE; OXYGEN PARTIAL PRESSURE; PASSIVE OXIDATION; WEIGHT GAIN;

SILICON CARBIDE;

EID: 0030215031     PISSN: 09145400     EISSN: None     Source Type: Journal    
DOI: 10.2109/jcersj.104.738     Document Type: Article

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