Compositional control of CdxZn1-xSe grown by photoassisted organometallic vapor phase epitaxy

Journal of Crystal Growth

Volumn 170, Issue 1-4, 1997, Pages 497-502

  Bao, K X ^a   Mo, R ^a   Zhang, X G ^a   Kalisetty, S ^a   Gokhale, M ^a   Robinson, J ^a   Zhao, G ^a   Ayers, I E ^a   Jain, F C ^a  

^a UNIVERSITY OF CONNECTICUT   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

INJECTION LASERS; IRRADIATION; SEMICONDUCTING CADMIUM COMPOUNDS; SEMICONDUCTING SELENIUM COMPOUNDS; SEMICONDUCTING ZINC COMPOUNDS; THERMAL EFFECTS;

COMPOSITIONAL CONTROL; PHOTOASSISTED EPITAXY;

CRYSTAL GROWTH;

EID: 0030712817     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)00652-5     Document Type: Article

References (19)

1. N. Nakayama, S. Itoh, T. Ohata, K. Nakano, M. Ozawa, A. Ishibashi, M. Ikeda and Y. Mori, Electron. Lett. 29 (1993) 1488.
2. A. Salokatve, H. Jeon, J. Ding, M. Hovinen, A.V. Nurmikko, D.C. Grillo, I. He, J. Han, Y. Fan, M. Ringle, R.L. Gunshor, G.C. Hua and N. Otsuka, Electron. Lett. 29 (1993) 2192.
3. A. Ishibashi and M. Ikeda, 7th Int. Conf, on II-VI Compounds and Devices, 1995, Edinburgh, UK, invited paper Mo-1.
4. J. Petruzello, K. Haberern, S. Herko, T. Marshall, R. Tijburg, J. Gaines, S. Guha and G. Haugen, 7th Int. Conf. on II-VI Compounds and Devices, 1995, Edinburgh, UK, invited paper Tu-12.
5. S. Taniguchi et al., Electron. Lett. 32 (1996) 552.
6. A. Toda, T. Margalith, D. Imanishi, K. Yanashima and A. Ishibashi, Electron. Lett. 31 (1995) 1921.
7. P.J. Parbrook, A. Kamata and T. Uemoto, J. Crystal Growth 128 (1993) 639.
8. P.J. Wright, B. Cockayne and A.J. Williams, J. Crystal Growth 72 (1985) 23.
9. Y. Kawakyu, S. Sasaki, M. Hirose and T. Beppu, Ext. Abstr. of the 18th Int. Conf. of Solid State Devices and Materials (1986) p. 643.
10. S. Fujita, F.Y. Takeuchi and S. Fujita, Jpn. J. Appl. Phys. 52 (1988) 1976.
11. S. Fujita, A. Tanabe, T. Sakamoto, M. Isemura and S. Fujita, J. Crystal Growth 93 (1988) 259.
12. T. Yasuda, Y. Koyama, J. Wakitani, J. Yoshino and H. Kukimoto, Jpn. J. Appl. Phys. 28 (1989) L1628.
13. M. Ichimura, T. Wada, S. Fujita and S. Fujita, Jpn. J. Appl. Phys. 30 (1991) 3475.
14. N.R. Taskar, B.A. Khan, D.R. Dorman and K. Shahzad, Appl. Phys. Lett. 62 (1992) 270.
15. S. Akram and I. Bhat, J. Crystal Growth 138 (1994) 105.
16. M.R. Gokhale, K.X. Bao, P.D. Healey, F.C, Jain and J.E. Ayers, J. Electron. Mater. 25 (1996) 207.
17. S. Fujita, S. Matsumoto and S. Fujita, J. Electron. Mater. 22 (1993) 521.
18. K.X. Bao, R. Mo, S. Kalisetty, M. Gokhale, J.E. Ayers and F.C. Jain, 1995, unpublished.
19. D.W. Shaw, in; Crystal Growth: Theory and Techniques, Vol. 1. Mechanisms in Vapour Epitaxy of Semiconductors, Ed. C.H.L. Goodman (Plenum, New York, 1974).