Degradation of PL characteristics in strained layer multi-quantum well structure with atomic ordering structure

Journal of Electronic Materials

Volumn 25, Issue 5, 1996, Pages 701-708

  Otsuka, Nobuyuki ^a   Kito, Masahiro ^a   Yabuuchi, Yasufumi ^b   Ishino, Masato ^a   Matsui, Yasushi ^a  

^a PANASONIC CORPORATION   (Japan)

^b Matsushita Technoresearch Inc   (Japan)

Author keywords

InGaAsP InP; Metalorganic vapor phase epitaxy; Ordering; Semiconductor laser; Strained layer multi quantum well

Indexed keywords

EID: 5244324501     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/bf02666527     Document Type: Article

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