Quantum interference of electrons transmitted throughout a double-barrier resonant tunnelling structure under a perpendicular magnetic field

Semiconductor Science and Technology

Volumn 12, Issue 1, 1997, Pages 86-90

  Figielski, T ^a   Wosinski T ^a   Vitusevich, S A ^b   Belyaev, A E ^b   Makosa A ^a   Dobrowolski, W ^a  

^a INSTITUTE OF PHYSICS   (Poland)

^b INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENTS; ELECTRON TUNNELING; HETEROJUNCTIONS; MAGNETIC FIELD EFFECTS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS;

DOUBLE BARRIER HETEROSTRUCTURES; FINE OSCILLATORY STRUCTURE;

QUANTUM INTERFERENCE DEVICES;

EID: 0030696574     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/12/1/016     Document Type: Article

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