Room-temperature quantum interference in an asymmetric triple-barrier resonant-tunnelling diode

Semiconductor Science and Technology

Volumn 11, Issue 1, 1996, Pages 103-106

  Strutz, T ^a   Shiraki, Y ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRON TUNNELING; HIGH ELECTRON MOBILITY TRANSISTORS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; TEMPERATURE;

ALUMINUM GALLIUM ARSENIDE; BAND DIAGRAM; QUANTUM INTERFERENCE; RESONANT TUNNELLING; RESONANT TUNNELLING HOT ELECTRON TRANSISTOR;

SEMICONDUCTOR DIODES;

EID: 0029734797     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/11/1/022     Document Type: Article

References (12)

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