Picosecond photoluminescence studies of carrier escape processes in a GaAs/Al0.3Ga0.7As single quantum well

Semiconductor Science and Technology

Volumn 11, Issue 3, 1996, Pages 331-339

  Thucydides, G ^a   Barnes, J M ^a   Tsui, E ^a   Barnham, K W J ^a   Phillips, C C ^a   Cheng, T S ^b   Foxon, C T ^b  

^a IMPERIAL COLLEGE LONDON   (United Kingdom)

^b UNIVERSITY OF NOTTINGHAM   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; ELECTRIC CURRENT MEASUREMENT; ELECTRIC FIELDS; ELECTRON TUNNELING; MATHEMATICAL MODELS; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DIODES; TEMPERATURE;

CONTINUOUS WAVE PHOTOLUMINESCENCE; PHOTOCURRENT MEASUREMENT; RADIATIVE RECOMBINATION RATE; THERMIONIC EMISSION PROCESSES; TIME RESOLVED PHOTOLUMINESCENCE;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0030110005     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/11/3/010     Document Type: Article

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