Front-end building blocks using the Glasgow 0.2μm GaAs MESFET process

IEE Colloquium (Digest)

Volumn , Issue 26, 1997, Pages

  Thayne, Iain ^a   Elgaid, Khaled ^a   Borsosfoldi, Zoltan ^a   Webster, Danny ^b   Murad, Saad ^a   Ward, Bill ^a   Ferguson, Susan ^a   Cameron, Nigel ^a   Edgar, David ^a   Valin, Isabelle ^a   Holland, Martin ^a   Taylor, Michael ^a   Haigh, David ^b   Beaumont, Steven ^a   Sewell, John ^a  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

^b UNIVERSITY COLLEGE LONDON   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFIERS (ELECTRONIC); BROADBAND NETWORKS; ELECTRON BEAM LITHOGRAPHY; MESFET DEVICES; MIXER CIRCUITS; MOLECULAR BEAM EPITAXY; REACTIVE ION ETCHING; RESONATORS; SEMICONDUCTING GALLIUM ARSENIDE;

LOW DAMAGE REACTIVE ION ETCHING; NICHROME RESISTORS; SEMICONDUCTOR RESISTORS;

MONOLITHIC MICROWAVE INTEGRATED CIRCUITS;

EID: 0030656750     PISSN: 09633308     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (7)

1. N.I. Cameron et al. "Selectively Dry Gate Recess Etched GaAs MESFETs, HEMTs and MMICs", J. Vac. Sci. Technol. B, 11, 6, 2244, 1993
2. 4 and the Thickness of the Capping Layer on Gate Recess Etching of GaAs pHEMTs", J. Vac. Sci. Technol. B, 14, 6, 3668, 1996
3. D.G. Haigh, "GaAs MESFET Active Resonator Circuits for Microwave Filter Applications", IEEE Trans. Microwave Theory and Techniques, 42, 7, 1319, 1994
4. D.G. Haigh et al. "On the Design of Continuous Time Active Filters at Microwave Freqneucies using GaAs Technology", Proc. 1991 European Conf. Circuit Technology, Vol. IV, Copenhagen, 1991
5. A.E Parker et al, "Improved MESFET Characterisation for Analog Circuit Design and Analysis", GaAs IC Symposium 1992
6. K. Elgaid et al., "Compact, Low Loss Coplanar Waveguide to Slotline Transition for MMMIC Applications", Electron. Lett., 32, 18, 1677, 1996
7. N.I. Cameron et al. "Gate Recess Engineering of pseudomorphic InGaAs/GaAs HEMTs", Electron. Lett., 32, 8, 770, 1996