Pressure dependence of dynamical and dielectric properties of 3C and 4H silicon carbide

Europhysics Letters

Volumn 35, Issue 3, 1996, Pages 195-200

  Karch, K ^a   Bechstedt, F ^a  

^a FRIEDRICH SCHILLER UNIVERSITY JENA   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0030594730     PISSN: 02955075     EISSN: None     Source Type: Journal    
DOI: 10.1209/epl/i1996-00553-2     Document Type: Article

References (22)

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