Metal-organic vapor phase epitaxy growth and optical study of gaas/gaas1-xpx, strained-barrier single quantum well structures

Japanese Journal of Applied Physics

Volumn 32, Issue 3 B, 1993, Pages L375-L378

  Zhang, Xiong ^a   Onabe, Kentaro ^a,b   Yaguchi, Hiroyuki ^a,b   Shiraki, Yasuhiro ^a   Ito, Ryoichi ^a,b  

^a UNIVERSITY OF TOKYO   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

Band offset; GaAsP; MOVPE; Photoluminescence; Reflectance; Strained barrier; X ray diffraction

Indexed keywords

EID: 84939370422     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.32.L375     Document Type: Article

References (7)

1. C. G. Osbourn: IEEE J. Quantum Electron. QE22 (1986) 1677.
2. D. J. Arent, K. Deneffe, C. Van Hoof, J. De Boeck and G. Borghs: J. Appl. Phys. 66 (1989) 1739.
3. M. E. Pistol, M. R. Leys and L. Samuelson: Phys. Rev. B37 (1988) 4664.
4. X. Zhang, K. Onabe, Y. Nitta, B. P. Zhang, S. Fukatsu, Y. Shiraki and R. Ito: Jpn. J. Appl. Phys. 30 (1991) L1631.
5. J. W. Matthews and A. E. Blakeslee: J. Cryst. Growth 27 (1974) 118.
6. T. P. Pearsall, F. H. Poliak, J. C. Bean and R. Hull: Phys. Rev. B33 (1986) 6821.
7. H. Yaguchi, X. Zhang, K. Ohta, M. Nagahara, K. Onabe, Y. Shiraki and R. Ito: Jpn. J. Appl. Phys. 32 (1993) 544.