Optoelectronic properties of hydrogenated amorphous silicon films grown using a modified pulsed plasma discharge

Applied Physics Letters

Volumn 68, Issue 2, 1996, Pages 194-196

  Mukherjee, C ^a   Anandan, C ^a   Seth, Tanay ^a   Dixit, P N ^a   Bhattacharyya, R ^a  

^a NATIONAL PHYSICAL LABORATORY   (India)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; DEPOSITION; ELECTRIC DISCHARGES; ENERGY GAP; FILM GROWTH; OPTIMIZATION; PHOTOCONDUCTIVITY; PHOTOSENSITIVITY; PLASMA APPLICATIONS; PLASMAS;

DWELL TIME; HIGH POWER LEVEL; HYDROGENATED AMORPHOUS SILICON FILMS; OPTICAL BAND GAP; PULSED PLASMA DISCHARGE;

AMORPHOUS FILMS;

EID: 0030574526     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.116457     Document Type: Article

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