Effect of power and pressure on the properties of hydrogenated amorphous silicon films prepared by DC glow discharge

Solar Energy Materials and Solar Cells

Volumn 31, Issue 2, 1993, Pages 215-226

  Seth, Tanay ^a   Dixit, P N ^a   Panwar, O S ^a   Bhattacharyya, R ^a  

^a NATIONAL PHYSICAL LABORATORY   (India)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; FILM GROWTH; FILM PREPARATION; GLOW DISCHARGES; HYDROGENATION; OPTOELECTRONIC DEVICES; PLASMA CONFINEMENT; PRESSURE EFFECTS; SEMICONDUCTING SILICON; SILANES;

DC GLOW DISCHARGE REACTOR; DEPOSITION RATE; OPTOELECTRONIC PROPERTIES; SILANE PRESSURE;

AMORPHOUS FILMS;

EID: 0027694392     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0927-0248(93)90052-5     Document Type: Article

References (19)

1. Ion–molecule reactions in a direct current silane glow discharge