Bias-free 1 Gbit/s data transmission using singlemode GaAs VCSELs at λ = 835 nm

Electronics Letters

Volumn 32, Issue 23, 1996, Pages 2145-2146

  Schnitzer, P ^a   Fiedler, U ^a   Grabherr, M ^a   Jung, C ^a   Reiner, G ^a   Zick, W ^a   Ebeling, K J ^a  

^a UNIVERSITY OF ULM   (Germany)

Author keywords

Data communication; Vertical cavity surface emitting lasers

Indexed keywords

BIT ERROR RATE; DATA COMMUNICATION SYSTEMS; LIGHT MODULATION; OPTICAL INTERCONNECTS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH;

PSEUDORANDOM DATA TRANSMISSION; VERTICAL CAVITY SURFACE EMITTING LASERS (VCSEL);

SEMICONDUCTOR LASERS;

EID: 0030574211     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19961463     Document Type: Article

References (4)

1. LEAR, K.L., CHOQUETTE, K.D., SCHNEIDER, R.P., KILCOYNE, S.P., and GEIB, K.M.: 'Selectively oxidised vertical cavity surface emitting lasers with 50% power conversion efficiency', Electron. Lett., 1995, 31, (3), pp. 208-209
2. HAYASHI, Y., MUKAIHARA, T. HATORI, N., OHNOKI, N., MATSUTANI, A., KOYAMA, F., and IGA, K.: 'Lasing characteristics of low-threshold oxide confinement InGaAs-GaAlAs vertical-cavity surface-emitting lasers', IEEE Photonics Technol. Lett., 1995, 7, (11), pp. 1324-1326
3. FIEDLER, U., REINER, G., SCHNITZER, P., and EBELING, K.J.: 'Top surface-emitting vertical-cavity laser diodes for 10Gbit/s data transmission', IEEE Photonics Technol. Lett., 1996, 8, (6), pp. 746-748
4. LEAR, K.L., MAR, A., CHOQUETTE, K.D., KILCOYNE, S.P., SCHNEIDER, Jr., R.P., and GEIB, K.M.: 'High-frequency modulation of oxide-confined vertical cavity surface emitting lasers', Electron. Lett., 1996, 32, (5), pp. 457-458