Damage profiles in as-implanted 〈100〉 Si crystals: Strain by X-ray diffractometry versus interstitials by RBS-channeling

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 120, Issue 1-4, 1996, Pages 64-67

  Nipoti, R ^a   Servidori, M ^a   Bianconi, M ^a   Milita, S ^a  

^a CNR   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; CRYSTAL IMPURITIES; ION BOMBARDMENT; ION IMPLANTATION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTOR DOPING; SILICON WAFERS; X RAY DIFFRACTION ANALYSIS;

DEFECT PROFILES;

SEMICONDUCTING SILICON;

EID: 0030566606     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(96)00480-6     Document Type: Article

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