Nanometer-scale passivation of Si(111) surfaces by using the √3 × √3-Ga reconstruction

Applied Surface Science

Volumn 107, Issue , 1996, Pages 6-10

  Fujita, K ^a   Kusumi, Y ^a   Ichikawa, M ^a  

^a JT RES CENTER FOR ATOM TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL ORIENTATION; NANOSTRUCTURED MATERIALS; OXIDATION; OXYGEN; PASSIVATION; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING GALLIUM; SURFACE PHENOMENA; SURFACE STRUCTURE;

CHEMICAL ACTIVITIES; MOLECULAR OXYGEN; SURFACE RECONSTRUCTION;

SEMICONDUCTING SILICON;

EID: 0030566203     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(96)00502-8     Document Type: Article

References (11)

1. A. Kawazu and H. Sakama, Phys. Rev. B 37 (1988) 2704.
2. K. Fujita, Y. Kusumi and M. Ichikawa, Surf. Sci. 357-358 (1996) 490.
3. H. Nakahara and M. Ichikawa, Appl. Phys. Lett. 61 (1992) 1531.
4. Ph. Avouris, I.-W. Lyo, F. Bozso and E. Kaxiras, J. Vac. Sci. Technol. A 8 (1990) 3405; Ph. Avouris, J. Phys. Chem. 94 (1990) 2246.
5. Ph. Avouris, I.-W. Lyo, F. Bozso and E. Kaxiras, J. Vac. Sci. Technol. A 8 (1990) 3405; Ph. Avouris, J. Phys. Chem. 94 (1990) 2246.
6. K. Takayanagi, Y. Tanishiro, M. Takahashi and S. Takahashi, J. Vac. Sci. Technol. A 3 (1985) 1502; Surf. Sci. 164 (1985) 367.
7. K. Takayanagi, Y. Tanishiro, M. Takahashi and S. Takahashi, J. Vac. Sci. Technol. A 3 (1985) 1502; Surf. Sci. 164 (1985) 367.
8. K. Takaoka, M. Yoshimura and T. Yao, Phys. Rev. B 48 (1993) 5657.
9. T.-C. Shen, C. Wang, J.W. Lyding and J.R. Tucker, Phys. Rev. B 50 (1994) 7453.
10. Ph. Avouris, I.-W. Lyo and F. Bozso, J. Vac. Sci. Technol. B 9 (1991) 424.
11. H. Hibino and T. Ogino, Surf. Sci. 328 (1995) L547.