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Volumn 56, Issue 1, 1990, Pages 45-47
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Characterization of strained InGaAs single quantum well structures by ion beam methods
a b |
Author keywords
[No Author keywords available]
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Indexed keywords
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EID: 36549101910
PISSN: 00036951
EISSN: None
Source Type: Journal
DOI: 10.1063/1.102642 Document Type: Article |
Times cited : (15)
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References (15)
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