Carbonization of Si surfaces by solid source molecular beam epitaxy

Materials Science and Engineering B

Volumn 29, Issue 1-3, 1995, Pages 138-141

  Zekentes, K ^a   Callec, R ^a   Tsagaraki, K ^a   Sagnes, B ^a   Arnaud, G ^b   Pascual, J ^b   Camassel, J ^c  

^a INSTITUTE OF COMPUTER SCIENCE   (Greece)

^b UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

^c UNIV MONTPELLIER   (France)

Author keywords

Auger electron spectroscopy; IR spectroscopy; Molecular beam epitaxy; Silicon carbide

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; CARBON; FOURIER TRANSFORM INFRARED SPECTROSCOPY; MOLECULAR BEAM EPITAXY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SCANNING ELECTRON MICROSCOPY; SILICON; SILICON CARBIDE; SINGLE CRYSTALS; SUBLIMATION; SUBSTRATES; SURFACES;

AUGER SURFACE ANALYSIS; ELECTRON GUN SUBLIMATION;

CARBONIZATION;

EID: 0029196945     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/0921-5107(94)04022-V     Document Type: Article

References (10)

1. Amorphous and crystalline silicon carbide IV