Damage profiles in as-implanted silicon: Fluence dependence

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 112, Issue 1-4, 1996, Pages 148-151

  Nipoti, R ^a   Lulli, G ^a   Milita, S ^a   Servidori, M ^a   Cellini, C ^b   Carnera, A ^b  

^a CNR   (Italy)

^b UNIVERSITY OF PADOVA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; RADIATION EFFECTS; SILICON WAFERS; X RAY CRYSTALLOGRAPHY;

AS IMPLANTED SILICON; FLUENCE DEPENDENCE; ION ATOMIC NUMBER;

ION IMPLANTATION;

EID: 0030563496     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/0168-583X(95)01423-3     Document Type: Article

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