Dynamic Monte Carlo simulation of nonlinear damage growth during ion implantation of crystalline silicon

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 112, Issue 1-4, 1996, Pages 152-155

  Albertazzi, E ^a   Bianconi, M ^a   Lulli, G ^a   Nipoti, R ^a   Carnera, A ^b   Cellini, C ^b  

^a CNR   (Italy)

^b UNIVERSITY OF PADOVA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ALGORITHMS; CRYSTALLINE MATERIALS; MATHEMATICAL MODELS; MONTE CARLO METHODS; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH;

CRYSTALLINE SILICON; DEFECT GENERATION DENSITY;

ION IMPLANTATION;

EID: 0030563393     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/0168-583X(95)01429-2     Document Type: Article

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