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Volumn 198-200, Issue PART 2, 1996, Pages 991-994

Steady state defect density and annealing kinetics of light-induced defects in a-Si:H deposited from 'new' deposition techniques

(3) Osborne, Ian S a,b Hata, Nobuhiro a Matsuda, Akihisa a

a ELECTROTECHNICAL LABORATORY (Japan)

b SHARP CORPORATION (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; DEFECTS; DENSITY (OPTICAL); FILM GROWTH; GASES; HYDROGENATION; PLASMA APPLICATIONS; SILANES; STABILITY; THIN FILMS; TRIODES;

ANNEALING ENERGY DISTRIBUTION; DICHLOROSILANE; STEADY STATE DEFECT DENSITY; TRIODE MESH BIASING TECHNIQUE;

AMORPHOUS SILICON;

EID: 0030563428 PISSN: 00223093 EISSN: None Source Type: Journal
DOI: 10.1016/0022-3093(96)00017-8 Document Type: Article

Times cited : (3)

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