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Volumn 198-200, Issue PART 1, 1996, Pages 81-84

Hydrogen incorporation in device-quality a-Si:H deposited at low temperature

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; ADDITION REACTIONS; ANNEALING; BONDING; ELECTRIC CONDUCTIVITY; ELECTRONIC PROPERTIES; GLOW DISCHARGES; HYDROGEN; LIGHT ABSORPTION; OPTICAL PROPERTIES;

EID: 0030563412     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-3093(96)80017-2     Document Type: Article
Times cited : (3)

References (9)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.