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Volumn 198-200, Issue PART 1, 1996, Pages 81-84
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Hydrogen incorporation in device-quality a-Si:H deposited at low temperature
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Author keywords
[No Author keywords available]
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Indexed keywords
ABSORPTION SPECTROSCOPY;
ADDITION REACTIONS;
ANNEALING;
BONDING;
ELECTRIC CONDUCTIVITY;
ELECTRONIC PROPERTIES;
GLOW DISCHARGES;
HYDROGEN;
LIGHT ABSORPTION;
OPTICAL PROPERTIES;
DARK DC CONDUCTIVITY;
DEVICE QUALITY GLOW DISCHARGE HYDROGENATED AMORPHOUS SILICON;
HYDROGEN BONDING;
INFRARED ABSORPTION SPECTRA;
AMORPHOUS SILICON;
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EID: 0030563412
PISSN: 00223093
EISSN: None
Source Type: Journal
DOI: 10.1016/0022-3093(96)80017-2 Document Type: Article |
Times cited : (3)
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References (9)
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