Cryogenic pressure and lifetime studies of a defect related emission in heavily silicon doped GaAs

Physica Status Solidi (B) Basic Research

Volumn 198, Issue 1, 1996, Pages 199-203

  Holtz, M ^a   Sauncy, T ^a   Dallas, T ^a   Seon, M ^a   Palsule, C P ^a   Gangopadhyay, S ^a   Massie, S ^b  

^a TEXAS TECH UNIVERSITY   (United States)

^b Quantum Epitaxial Designs Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0030491039     PISSN: 03701972     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssb.2221980127     Document Type: Article

References (11)

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