Electron paramagnetic resonance of erbium doped silicon

Applied Physics Letters

Volumn 69, Issue 25, 1996, Pages 3854-3856

  Carey, J D ^a   Donegan, J F ^a   Barklie, R C ^a   Priolo, F ^b   Franzo G ^c   Coffa, S ^c  

^a TRINITY COLLEGE DUBLIN   (Ireland)

^b UNIVERSITY OF CATANIA   (Italy)

^c CNR IMETEM   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; CRYSTAL SYMMETRY; ELECTRON EMISSION; ELECTRON SPIN RESONANCE SPECTROSCOPY; ELECTRON TRANSITIONS; EPITAXIAL GROWTH; ERBIUM; IMPURITIES; ION IMPLANTATION; OXYGEN; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTOR DOPING;

FLOAT ZONE SILICA; MONOCLINIC SYMMETRY; TETRAHEDRAL INTERSTITIAL SITE;

SILICON WAFERS;

EID: 0030420883     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.117127     Document Type: Article

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