Α(6H)-Sicpressure Sensors at 350°C

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1996, Pages 525-526

  Okojie, Robert S ^a   Ned, Alexander A ^a   Kurtz, Anthony D ^a   Cam, William N ^b  

^a Kulite Semiconductor Products Inc   (United States)

^b NEW JERSEY INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SILICON CARBIDE; TEMPERATURE; ELECTRIC RESISTANCE; PRESSURE GAGES; PRESSURE MEASUREMENT; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE;

BATCH MANUFACTURING; BATCH OPERATION; GAGE FACTORS; NEGATIVE VALUES; PIEZORESISTIVE PRESSURE SENSORS; SILICON TECHNOLOGIES; TEMPERATURE COEFFICIENT; TEMPERATURE COEFFICIENTS OF RESISTANCE;

PRESSURE SENSORS; SILICON SENSORS;

FULL SCALE OUTPUT; PIEZORESISTIVE PRESSURE SENSORS; TEMPERATURE COEFFICIENT;

EID: 0030419038     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.1996.554038     Document Type: Conference Paper

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