SCOPUS 정보 검색 플랫폼

Materials Science and Engineering B

Volumn 42, Issue 1-3, 1996, Pages 217-224

Residual polishing damage and surface quality of commercial InP wafers: A scanning PL study

(3) Laczik, Z a Booker, G R a Mowbray, A b

a UNIVERSITY OF OXFORD (United Kingdom)

b IQE INC (United States)

Author keywords

InP wafers; Photoluminescence; Surface polishing damage

Indexed keywords

ANNEALING; COMPOSITION EFFECTS; CRYSTAL DEFECTS; ETCHING; LASER BEAMS; LOW TEMPERATURE EFFECTS; MICROCRACKS; PHOTOLUMINESCENCE; POLISHING; SEMICONDUCTOR GROWTH; SURFACE STRUCTURE;

SURFACE POLISHING DAMAGE;

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 0030414063 PISSN: 09215107 EISSN: None Source Type: Journal
DOI: 10.1016/S0921-5107(96)01710-2 Document Type: Article

Times cited : (8)

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