Assessment of residual subsurface polishing damage in InP wafers by photoluminescence

Journal of Crystal Growth

Volumn 158, Issue 1-2, 1996, Pages 37-42

  Laczik, Z ^a   Booker, G R ^a   Mowbray, A ^b  

^a UNIVERSITY OF OXFORD   (United Kingdom)

^b IQE INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL POLISHING; CRACKS; DISLOCATIONS (CRYSTALS); INTEGRATED OPTOELECTRONICS; PHOTOLUMINESCENCE; SEMICONDUCTOR DOPING; SULFUR;

CHEMICALLY ANGLE-POLISHED SURFACES; DEPTH RESOLUTION; LATERAL RESOLUTION; SUBSURFACE POLISHING DAMAGE; WAFERS;

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 0029753380     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(95)00347-9     Document Type: Article

References (8)

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2. A.M. Huber and C. Grattepain, Mater. Sci. Forum 38-41 (1989) 1345.
3. A.M. Huber and N. Briot, Mater. Sci. Eng. B 28 (1994) 61.
4. D.B. Wittry and D.F. Kyser, J. Appl. Phys. 35 (1964) 2439.
5. Y.M. Chu, D.B. Darby and G.R. Booker, in: Proc. of Microsc. Semicond. Mater. Conf., Eds. A.G. Cullis and D.C. Joy (Inst. of Phys., Bristol, 1981) p. 331.
6. A.M. Huber and N.T. Linh, J. Crystal Growth 29 (1975) 80.
7. G.R. Booker, in: Dislocations in Solids - Discussions of the Faraday Society (The Faraday Society, London, 1964) No. 38, p. 298.
8. R. Stickler and G.R. Booker, Philos. Mag. 8 (1963) 859.