A high-Q broad-band active inductor and its application to a low-loss analog phase shifter

IEEE Transactions on Microwave Theory and Techniques

Volumn 44, Issue 12 PART 2, 1996, Pages 2369-2374

  Hayashi, Hitoshi ^a   Muraguchi, Masahiro ^a   Umeda, Yohtaro ^a   Enoki, Takatomo ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC RESISTANCE; HIGH ELECTRON MOBILITY TRANSISTORS; INTEGRATED CIRCUIT LAYOUT; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; PHASE SHIFT; PHASE SHIFTERS; Q FACTOR MEASUREMENT; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; VARACTORS;

ANALOG PHASE SHIFTERS; BROADBAND ACTIVE INDUCTORS; DRAIN TO SOURCE INDUCTANCE; INSERTION LOSSES;

ELECTRIC INDUCTORS;

EID: 0030412652     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/22.554562     Document Type: Article

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