Formation process of highly reliable ultra-thin gate oxide

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 2 SUPPL. B, 1996, Pages 1531-1534

  Ohmi, Kazuyuki ^a   Iwamoto, Toshiyuki ^a   Yabune, Tatuhiro ^a   Miyake, Toshiki ^a   Ohmi, Tadahiro ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

Active hydrogen; High reliability; Post oxidation annealing; Ultra thin oxide

Indexed keywords

ANNEALING; CHEMICAL BONDS; ELECTRIC BREAKDOWN; ELECTRIC FIELD EFFECTS; ELECTRIC FIELDS; ELECTRIC VARIABLES MEASUREMENT; FILM GROWTH; HYDROGEN; OXIDES; RELIABILITY; ULTRATHIN FILMS;

ACTIVE HYDROGEN; BREAKDOWN TEST; CONSTANT CURRENT STRESS; GATE VOLTAGE SHIFT; HYDROGEN RADICAL BALANCED STEAM OXIDATION; POST OXIDATION ANNEALING; REDUCTIVE AMBIENT; ULTRA THIN GATE OXIDE;

OXIDATION;

EID: 0030080403     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.1531     Document Type: Article

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