SCOPUS 정보 검색 플랫폼

Volumn 69, Issue 25, 1996, Pages 3893-3895

Gain characteristics of gain-guided II-VI laser diodes

(9) Yoshida, H a,b,c Gonno, Y a Nakano, K a Taniguchi, S a Hino, T a Ishibashi, A a Ikeda, M a Chuang, S L b Hegarty, J c

a SONY CORPORATION (Japan)

b UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN (United States)

c TRINITY COLLEGE DUBLIN (Ireland)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; ELECTRIC CURRENTS; EMISSION SPECTROSCOPY; ENERGY GAP; LIGHT EMISSION; OPTICAL VARIABLES MEASUREMENT; QUANTUM EFFICIENCY; REFRACTIVE INDEX; SEMICONDUCTING ZINC COMPOUNDS; SURFACE ROUGHNESS; THERMAL EFFECTS;

AMPLIFIED SPONTANEOUS EMISSION; GAIN GUIDED LASERS; INJECTION CURRENTS; INTERNAL CAVITY LOSS; PULSE CURRENTS;

QUANTUM WELL LASERS;

EID: 0030402514 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.117561 Document Type: Article

Times cited : (6)

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