A Novel Electroluminescent Diode with Nanocrystalline Silicon Quantum Dots

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1996, Pages 417-420

  Yoshida, Takehito ^a   Yamada, Yuka ^a   Orii, Takaaki ^b  

^a Matsushita Research Institute Tokyo Inc   (Japan)

^b UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRODES; ELECTROLUMINESCENCE; HOT ELECTRONS; INERT GASES; IONIZATION OF GASES; LASER ABLATION; NANOCRYSTALLINE SILICON; NANOCRYSTALS; SEMICONDUCTOR DIODES; SEMICONDUCTOR QUANTUM DOTS; CURRENT DENSITY; ELECTRIC CONDUCTIVITY; ELECTROCHEMICAL ELECTRODES; EMISSION SPECTROSCOPY; IONIZATION; LUMINESCENT DEVICES; NANOSTRUCTURED MATERIALS; PLATINUM; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON; VAPOR DEPOSITION;

ACTIVE LAYER; ELECTROLUMINESCENT DIODES; GAS AMBIENTS; NANOCRYSTALLINE SILICON QUANTUM DOTS; PT ELECTRODE; PT-ELECTRODES; PULSED LASER ABLATION; RECTIFYING BEHAVIORS; SILICON NANOCRYSTALLITES; VISIBLE SPECTRUMS;

IMPACT IONIZATION; SEMICONDUCTOR DIODES;

ELECTROLUMINESCENCE DIODE; IMPACT IONIZATION; NANOCRYSTALLINE SILICON QUANTUM DOTS;

EID: 0030402055     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.1996.553616     Document Type: Conference Paper

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