Comments on lasing and many-exciton physics in strongly confined systems

Physica Scripta T

Volumn 68, Issue , 1996, Pages 117-120

  Cingolani, Roberto ^a  

^a UNIVERSITY OF SALENTO   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

BINDING ENERGY; ELECTRONIC DENSITY OF STATES; EXCITONS; HETEROJUNCTIONS; HIGH TEMPERATURE OPERATIONS; MOLECULAR PHYSICS; PHASE TRANSITIONS; SEMICONDUCTOR DEVICE STRUCTURES;

EXCITON GAS; FREE CARRIER GAS; HIGH INJECTION DENSITY; LASING; MANY EXCITON PHYSICS;

QUANTUM WELL LASERS;

EID: 0030397664     PISSN: 02811847     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1088/0031-8949/1996/t68/016     Document Type: Review

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21. The localization occurring in Cd-rich quantum wells is expected to raise considerably the screening threshold of the exciton, and is not accounted for in our theory. On a pure phenomenological basis, we note that the inhomegenous broadening of the deep quantum wells is substantially larger than in the shallow ones, indicating that compositional fluctuation might indeed strongly affect our results. A strong confirmation of the localization process comes from time resolved luminescence experiments, showing long luminescence rise time in deep quantum wells, even at injection densities around the stimulated emission threshold. See: Lomascolo, M. et al., Appl. Phys. Lett. 69, 1145 (1996).