Free versus localized exciton recombination in Zn1-xCdxSe/ZnSe multiple quantum wells

Applied Physics Letters

Volumn 69, Issue 8, 1996, Pages 1145-1147

  Lomascolo, M ^a   Di Dio, M ^a   Greco, D ^b   Calcagnile, L ^b   Cingolani, R ^b   Vanzetti, L ^c,d   Sorba, L ^c,e   Franciosi, A ^c,f,g  

^a Centro Nazionale per la Ricerca e lo Sviluppo dei Materiali   (Italy)

^b UNIVERSITY OF SALENTO   (Italy)

^c Lab Tecnologie Avanzate S   (Italy)

^d Centro Materiali Biofisica Medica   (Italy)

^e CNR   (Italy)

^f University of Minnesota   (United States)

^g UNIVERSITY OF TRIESTE   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; DIFFERENTIAL EQUATIONS; EXCITONS; MATHEMATICAL MODELS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR PLASMAS;

DECAY TIMES; EXCITON LOCALIZATION; FREE EXCITON RECOMBINATION; RATE EQUATION MODEL; ZINC CADMIUM SELENIDE; ZINC SELENIDE;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0030212663     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.117086     Document Type: Article

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