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Volumn E77-A, Issue 1, 1994, Pages 150-157
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Abnormal epitaxial layer of AlGaAs/GaAs solar cells for space applications
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Author keywords
[No Author keywords available]
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Indexed keywords
BAND STRUCTURE;
CHARGE CARRIERS;
ENERGY GAP;
EPITAXIAL GROWTH;
RELIABILITY;
SEMICONDUCTING ALUMINUM COMPOUNDS;
SEMICONDUCTING GALLIUM ARSENIDE;
SOLAR CELL ARRAYS;
SPACE APPLICATIONS;
STRUCTURE (COMPOSITION);
ABNORMAL EPITAXIAL LAYER;
ENERGY CONVERSION EFFICIENCY;
HETEROFACE SOLAR CELL STRUCTURE;
LIQUID PHASE EPITAXY PROCESS;
NATIONAL SPACE DEVELOPMENT AGENCY OF JAPAN (NASDA);
SOLAR CELLS;
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EID: 0028259246
PISSN: 09168508
EISSN: None
Source Type: Journal
DOI: None Document Type: Article |
Times cited : (3)
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References (13)
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