Hydrogen atom extraction and redeposition on hydrogen-terminated silicon surface with scanning tunneling microscope at room temperature

Scanning Microscopy

Volumn 10, Issue 3, 1996, Pages 717-726

  Huang, D H ^a   Yamamoto, Y ^a,b  

^a JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^b STANFORD UNIVERSITY   (United States)

Author keywords

Electron excitation; Field induced evaporation; Hydrogen extraction and deposition; Hydrogen terminated silicon surface; Scanning tunneling microscope

Indexed keywords

HYDROGEN; SILICON;

ADSORPTION; ARTICLE; DESORPTION; ELECTRON; ENERGY; ENVIRONMENTAL TEMPERATURE; EXCITATION; EXTRACTION; PRIORITY JOURNAL; SCANNING ELECTRON MICROSCOPY; SCANNING TUNNELING MICROSCOPY;

EID: 0030316897     PISSN: 08917035     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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