Design characteristics of a 100 kV, 100 kW plasma ion implantation facility

Surface and Coatings Technology

Volumn 85, Issue 1-2, 1996, Pages 86-91

  Matossian, J N ^a   Goebel, D M ^a  

^a Hughes Aircraft Co   (United States)

Author keywords

High voltage; Plasma ion implantation; Pulsed power

Indexed keywords

DESIGN; ELECTRIC CURRENTS; FACILITIES; MODULATORS; PLASMA SOURCES; PLASMAS; PULSE MODULATION; STAINLESS STEEL;

PLASMA ION IMPLANTATION; PLASMA PRODUCTION; PULSE CURRENTS; PULSED POWER; VACUUM CHAMBER; VOLTAGE MODULATION;

ION IMPLANTATION;

EID: 0030296202     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/0257-8972(96)02874-5     Document Type: Article

References (21)

1. J.R. Conrad, U.S. Patent No. 4,764,394, August 16, 1988.
2. J.R. Conrad, J.L. Radke, R.A. Dodd, F.J. Worzala and N.C. Tran, J. Appl. Phys., 62 (1987) 4591.
3. R.J. Adler, J. Scheuer and W. Horne, Thyratron modulators in plasma source ion implantation, Proc. 1995 IEEE Pulsed Power Conf.
4. J.R. Conrad and K. Sridhara (eds.), J. Vac. Sci. Technol. B, 12(2) (1994).
5. These proceedings.
6. J.N. Matossian, J.J. Vajo, J.A. Wysocki and M.E. Bellon, Surf. Coat. Technol., 62 (1993) 593.
7. J.N. Matossian, J. Vac. Sci. Technol. B, 12(2) (1994) 850.
8. J.N. Matossian, J.A. Wysocki, R.G. Wilson, F.G. Yamagishi and E.F. Ryntz, U.S. Patent No. 5,143,747, Sept. 1, 1992.
9. Isolation Design Incorporated, Sunnyvale, CA.
10. Times Microwave Systems, DGI Industries, Fountain Valley, CA.
11. CTI Cryogenics, San Jose, CA.
12. J.N. Matossian and J.R. Beattie, J. Prop. Power 5(2) (1989) 188.
13. J.R. Beattie, J.N. Matossian and M.W. Sawins, Computerized technique for measuring, analyzing, and presenting plasma diagnostics in ion thrusters, NASA New Technology Innovation Report, February, 1985.
14. J.N. Matossian and D.M. Goebel, U.S. Patent No. 5,218,179, June 8, 1993.
15. J.N. Matossian and D.M. Goebel, U.S. Patent No. 5,296,272, March 22, 1994.
16. D.J. Gregoire, J.N. Matossian and J.D. Williams, Atomic-Nitrogen-Ion Plasma Source for Plasma Ion Implantation, in publication.
17. J.N. Matossian and R. Wei, Challenges and progress toward achieving a 250 kV, 100 kW, plasma ion implantation facility, this conference.
18. J.N. Matossian and J.R. Beattie, J. Prop. Power, 7(6) (1991) 968.
19. J.N. Matossian and R. Wei, Operating characteristics of a 100 kV, 100 kW plasma ion implantation facility, this conference.
20. The Ohmweave Company, Niantic, CT.
21. D.M. Goebel and J.N. Matossian, U.S. Patent No. 5,212,425, May 18, 1993.