Electronic and surfactant effects of As interlayers at Ag/InP(110) interfaces

Surface Science

Volumn 352-354, Issue , 1996, Pages 855-860

  Schomann S ^a   Schmidt, K ^a   Peisert, H ^a   Chasse T ^a   Horn, K ^b  

^a UNIVERSITY OF LEIPZIG   (Germany)

^b FRITZ HABER INSTITUT DER MAX PLANCK GESELLSCHAFT   (Germany)

Author keywords

Arsenic; Growth; Indium phosphide; Low index single crystal surfaces; Metal semiconductor interfaces; Schottky barrier; Silver; Soft X ray photoelectron spectroscopy

Indexed keywords

ARSENIC; CHEMICAL BONDS; CRYSTAL GROWTH; INTERFACES (MATERIALS); MONOLAYERS; PHOTOEMISSION; SCHOTTKY BARRIER DIODES; SEMICONDUCTING INDIUM PHOSPHIDE; SILVER; SURFACE ACTIVE AGENTS; SURFACES; X RAY PHOTOELECTRON SPECTROSCOPY;

GROWTH MODE; INTERFACE REACTION; INTERLAYERS; INTERMEDIATE ARSENIC MONOLAYER;

SURFACE STRUCTURE;

EID: 0030141536     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(95)01287-7     Document Type: Article

References (22)

1. L. Brillson, Surf. Sci. Rep. 2 (1982) 123.
2. A.M. Green and W.E. Spicer, J. Vac. Sci. Technol. A 11 (1993) 1061.
3. J.R. Waldrop, J. Vac. Sci. Technol. B 3 (1985) 1197; Appl. Phys. Lett. 47 (1985) 1301.
4. J.R. Waldrop, J. Vac. Sci. Technol. B 3 (1985) 1197; Appl. Phys. Lett. 47 (1985) 1301.
5. D. Troost, K. Strathausen and W. Mönch, Formation of Semiconductor Interfaces, Proc. of the 4th Int. Conf., ICFSI-4, Jülich, 1993, p. 305
6. D.R.T. Zahn, N. Esser, C. Müller, W. Richter, C. Stephens, R. Whittle, I.T. McGovern, S. Kulkarni and W. Braun, Appl. Surf. Sci. 56-58 (1992) 228.
7. R. Saiz-Pardo, R. Rincon, R. Perez and F. Flores, Proc. of the 4th Int. Conf. on the Formation of Semiconductor Interfaces, Jülich, 1993, p. 301.
8. R. Saiz-Pardo, R. Rincon, R. Perez and F. Flores, Surf. Sci. 307-309 (1994) 309.
9. C. Stephens, D.R.T. Zahn, K. Fives, R. Cimino, W. Braun and I.T. McGovern, J. Vac. Sci. Technol. B 8 (1990) 674; Ch. Maierhofer, D.R.T. Zahn, D.A. Evans and K. Horn, Appl. Surf. Sci. 56-58 (1992) 738.
10. C. Stephens, D.R.T. Zahn, K. Fives, R. Cimino, W. Braun and I.T. McGovern, J. Vac. Sci. Technol. B 8 (1990) 674; Ch. Maierhofer, D.R.T. Zahn, D.A. Evans and K. Horn, Appl. Surf. Sci. 56-58 (1992) 738.
11. G. Hollinger, D. Gallet, M. Gendry, C. Santinelli and P. Viktorovich, J. Vac. Sci. Technol. B 8 (1990) 4, 832.
12. A.B. Mc Lean and R.H. Williams, J. Phys. C 21 (1988) 783.
13. T. Chassé, G. Neuhold and K. Horn, Surf. Sci. 331-333 (1995).
14. A. Tulke and H. Lüth, Surf. Sci. 211/212 (1989) 1001.
15. W. Wilke, V. Hinkel, W. Theis and K. Horn, Phys. Rev. B 40 (1989) 9824.
16. T. Chassé, M. Alonso, R. Cimino, W. Theis, W. Braun and K. Horn, Appl. Surf. Sci. 64 (1993) 329.
17. N. Newman, T. Kendelewicz, L. Bowman and W.E. Spicer, Appl. Phys. Lett. 46 (1985) 1176.
18. A. Ismail, A. BenBrahim, J.M. Palau, L. Lassabatere and I. Lindau, Vacuum 36 (1986) 217.
19. R.H. Williams, A.B. McLean, D.A. Evans and W.G. Herrenden-Harker, J. Vac. Sci. Technol. B 4 (1986) 9619.
20. R. Cao, K. Miyano, I. Lindau and W.E. Spicer J. Vac. Sci. Technol. A 7 (1989) 861.
21. I.M. Vitomirov, C.M. Aldao, G.D. Waddill, C. Capasso and J.H. Weaver, Phys. Rev. B 41 (1990) 8465.
22. B. Voigtländer, A. Zinner, T. Weber and H.P. Bonzel, Phys. Rev. B 51 (1995) 7583.