Fabrication of InGaAs ridge quantum wires by selective molecular beam epitaxy and their characterization

Journal of Crystal Growth

Volumn 150, Issue , 1995, Pages 327-331

  Fujikura, H ^a   Hasegawa, H ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHARACTERIZATION; FABRICATION; MOLECULAR BEAM EPITAXY; NANOSTRUCTURED MATERIALS; PHOTOLUMINESCENCE; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING INDIUM COMPOUNDS; SUBSTRATES;

MESAPATTERNED SUBSTRATES; RIDGE QUANTUM WIRES;

SEMICONDUCTOR QUANTUM WIRES;

EID: 0029306739     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(95)80229-6     Document Type: Article

References (9)

1. Growth of strained InGaAs/GaAs quantum wells and index guided injection lasers over nonplanar substrates by molecular beam epitaxy
2. Fabrication process and properties of InGaAs wires having Si interface control layers for removal of Fermi level pinning
3. Simulation of epitaxial growth over patterned substrates