Simulation of Czochralski melt flows using parallel adaptive finite element procedures

Modelling and Simulation in Materials Science and Engineering

Volumn 4, Issue 6, 1996, Pages 623-639

  Givoli, Dan ^a,c   Flaherty, Joseph E ^a   Shephard, Mark S ^b  

^a Rensselaer Polytechnic Institute   (United States)

^b RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^c TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; EFFECTS; FINITE ELEMENT METHOD; LEAST SQUARES APPROXIMATIONS; NATURAL CONVECTION; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTING SILICON; VARIATIONAL TECHNIQUES;

FORCED CONVECTION; GALERKIN LEAST SQUARES SPACE;

CRYSTAL GROWTH FROM MELT;

EID: 0030287229     PISSN: 09650393     EISSN: None     Source Type: Journal    
DOI: 10.1088/0965-0393/4/6/006     Document Type: Article

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