Properties of high-mobility Cu2O films prepared by thermal oxidation of Cu at low temperatures

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 11, 1996, Pages 5631-5636

  Matsumura, Hideki ^a   Fujii, Asako ^a   Kitatani, Tomohiro ^a  

^a JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

Author keywords

Cupric oxide; Cuprous oxide; High mobility material; Metal oxide

Indexed keywords

CUPRIC OXIDE; CUPROUS OXIDE; GROWTH RATE; HALL MOBILITY; VAN DER PAUW METHOD;

COPPER OXIDES; ELECTRIC PROPERTIES; FILM GROWTH; RUTHERFORD BACKSCATTERING SPECTROSCOPY; STABILITY; THERMOOXIDATION; X RAY DIFFRACTION ANALYSIS;

SEMICONDUCTING FILMS;

EID: 0030286174     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.5631     Document Type: Article

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