Comparison of ICI and IBr plasma chemistries for etching of InGaAlP alloys

Journal of the Electrochemical Society

Volumn 143, Issue 11, 1996, Pages 3656-3661

  Hong, J ^a,d   Lee, J W ^a   Lambers, E S ^a   Abernathy, C R ^a,d   Pearton, S J ^a,d   Constantine, C ^b   Hobson, W S ^c,d  

^a University of Florida   (United States)

^b Plasma Therm IP   (United States)

^c LUCENT TECHNOLOGIES   (United States)

^d ELECTROCHEMICAL SOCIETY

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM ALLOYS; COMPOSITION EFFECTS; DEGRADATION; ELECTRON CYCLOTRON RESONANCE; INDIUM ALLOYS; MASKS; MORPHOLOGY; PHOTORESISTS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE STRUCTURES; SURFACE STRUCTURE;

ETCHSTOP LAYERS;

PLASMA ETCHING;

EID: 0030285062     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1837267     Document Type: Review

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