Self limiting growth on nominally oriented (111)A GaAs substrates in atomic layer epitaxy

Applied Surface Science

Volumn 103, Issue 3, 1996, Pages 275-278

  Lee, Jeong Sik ^a   Iwai, Sohachi ^a   Isshiki, Hideo ^a   Meguro, Takashi ^a   Sugano, Takuo ^a   Aoyagi, Yoshinobu ^a  

^a INST OF PHYS AND CHEMICAL RESEARCH   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; MONOLAYERS; SEMICONDUCTING GALLIUM ARSENIDE; SUBSTRATES; SURFACE STRUCTURE;

ARSENIC HYDRIDES FEEDING; ATOMIC LAYER EPITAXY (ALE); GROWTH RATE SATURATION; LAYER BY LAYER GROWTH;

SEMICONDUCTOR GROWTH;

EID: 0030284407     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/0169-4332(96)00459-X     Document Type: Article

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