Evaluation of structural degradation in packaged semiconductor components using a transient thermal characterisation technique

Microelectronics Reliability

Volumn 36, Issue 11-12 SPEC. ISS., 1996, Pages 1807-1810

  Christiaens, F ^a   Vandevelde, B ^a   Beyne, E ^a   Roggen, J ^a  

^a IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; FINITE ELEMENT METHOD; MICROELECTRONICS; NONDESTRUCTIVE EXAMINATION; SEMICONDUCTOR DEVICE TESTING; THERMAL EFFECTS; THERMODYNAMIC PROPERTIES; ELECTRIC IMPEDANCE MEASUREMENT; FAILURE ANALYSIS; FATIGUE OF MATERIALS; NETWORK COMPONENTS; QUALITY CONTROL; THERMAL VARIABLES MEASUREMENT;

INDIRECT TRANSIENT TEMPERATURE RESPONSE MEASUREMENT; NONDESTRUCTIVE PACKAGE QUALITY EVALUATION; STRUCTURAL DEGRADATION; TRANSIENT THERMAL CHARACTERIZATION TECHNIQUE;

SEMICONDUCTOR DEVICES; ELECTRONICS PACKAGING;

EID: 0030274018     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/0026-2714(96)00202-8     Document Type: Article

References (2)

1. F. Christiaens and E. Beyne, Transient Thermal Modelling and Characterisation of a Hybrid Component, Proceedings 46th Electronic Components and Technology Conference, pp 154-164, Orlando, USA (1996).
2. J.W. Sofia, Analysis of Thermal Transient Data with Synthesized Dynamic Models for Semiconductor Devices, Proceedings of the tenth SEMI-THERM Conference, pp 78-85, San José, USA (1994).