Transit time of high-speed bipolar transistors in dependence on operating point, technological parameters, and temperature

Volumn , Issue , 1989, Pages 250-253

  Schroter, M ^a   Rein, H M ^a  

^a RUHR UNIVERSITY BOCHUM   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

INTEGRATED CIRCUITS, DIGITAL; TRANSISTORS--THEORY;

BIPOLAR INTEGRATED CIRCUITS; HIGH-SPEED BIPOLAR TRANSISTORS; TEMPERATURE DEPENDENCE; TRANSIT TIME;

TRANSISTORS, BIPOLAR;

EID: 0024889966     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)