Photoreflectance versus photoluminescence in strain induced quantum well wires

Solid State Communications

Volumn 100, Issue 4, 1996, Pages 221-225

  Geddo, M ^a   Di Lernia, S ^a   Stella, A ^a   Bosacchi, A ^b   Franchi, S ^b   Gentili, M ^b   Peschiaroli, D ^b  

^a UNIVERSITY OF PAVIA   (Italy)

^b CNR   (Italy)

Author keywords

A. nanostractures; D. optical properties; E. light absorption and reflection; E. luminescence

Indexed keywords

CHARGE CARRIERS; LIGHT ABSORPTION; LIGHT REFLECTION; NANOSTRUCTURED MATERIALS; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

PHOTOREFLECTANCE; WIRE SHAPED STRESSORS;

SEMICONDUCTOR QUANTUM WIRES;

EID: 0030270544     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1098(96)00402-4     Document Type: Article

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