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Volumn 93, Issue 3, 1996, Pages 267-272
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Photoreflectance analysis of MQWs in intermediate electric field regime
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Author keywords
[No Author keywords available]
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Indexed keywords
ELECTRIC FIELD EFFECTS;
MATHEMATICAL MODELS;
MOLECULAR BEAM EPITAXY;
MULTILAYERS;
OPTICAL PROPERTIES;
OSCILLATIONS;
SEMICONDUCTOR GROWTH;
SPECTRUM ANALYSIS;
SPURIOUS SIGNAL NOISE;
SURFACE PROPERTIES;
ASPNES ASYMPTOTIC EXPRESSION;
EXCITON PHOTOREFLECTANCE;
FIRST DERIVATIVE FUNCTIONAL FORMS;
FRANZ-KELDYSH OSCILLATIONS;
INTERMEDIATE ELECTRIC FIELD REGIME;
LINESHAPE MODEL;
PHOTOREFLECTANCE ANALYSIS;
QUANTUM CONFINEMENT;
SEMICONDUCTOR QUANTUM WELLS;
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EID: 0030108026
PISSN: 01694332
EISSN: None
Source Type: Journal
DOI: 10.1016/0169-4332(95)00342-8 Document Type: Article |
Times cited : (2)
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References (24)
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