Structure and electrical characteristics of ICBD C60 films

Applied Physics A: Materials Science and Processing

Volumn 63, Issue 4, 1996, Pages 353-357

  Shi, Y ^a   Xiong, C M ^a   Wang, X S ^a   Lei, C H ^a   Guo, H X ^a   Fan, X J ^a  

^a WUHAN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL STRUCTURE; CURRENT VOLTAGE CHARACTERISTICS; DEPOSITION; ELECTRIC PROPERTIES; ELECTRIC VARIABLES MEASUREMENT; POLYCRYSTALLINE MATERIALS; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

BAND THEORY; CURRENT RECTIFICATION; IONIZED CLUSTER BEAM DEPOSITION; SILICON SUBSTRATES;

CARBON;

EID: 0030264335     PISSN: 09478396     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF01567326     Document Type: Article

References (26)

1. H.W. Kroto, J.R. Heath, S.C. O'Brien, R.F. Curl, R.E. Smalley: Nature 318, 162 (1985)
2. W. Krätschmer, L.D. Lamb, K. Fostiropoulos, D.R. Huffman: Nature 347, 354 (1990)
3. G. Gensterbium, L.M. Yu, J.J. Pireaux, P.A. Thiry, R. Caudano, J.M. Themlin, S. Bouzidi, F. Coletti, J.M. Debever: Appl. Phys. A 56, 175 (1993)
4. Y.Z. Li, M. Ghander, J.C. Patrin, J.H. Weaver, L.P.F. Chibante, R.E. Smalley: Science 253, 429 (1992)
5. W. Krakow, N.M. Rivera, R.A. Roy, R.S. Ruoff, J.J. Cuomo: Appl. Phys. A 56, 185 (1993)
6. A.F. Hebard, R.C. Haddon, R.M. Fleming, A.R. Kortan: Appl. Phys. Lett. 59, 2109 (1991)
7. T. Juhasz, X.H. Hu, C. Suarez, W.E. Bron, E, Maiken, P. Taborek: Phys. Rev. B 48, 4929 (1993)
8. S.C. Wu, K. Xun, J.Z. Deng, J. Yao, F.Q. Liu, S.H. Lu, Z.Q. Wang, R.S. Han, Z.N. Gu: Phys. Rev. B 47, 13830 (1993)
9. A.F. Hebard, M.J. Rosseinsky, R.C. Haddon, D.W. Murphy, S.H. Glarum, T.M. Palstra, A.P. Ramirez, A.R. Kortan: Nature 350, 600 (1991)
10. S. Saito, A. Oshiyama: Phys. Rev. Lett. 66 2637 (1991)
11. A. Hamed, Y.Y. Sun, Y.K. Tao, R.L. Meng, P.H. Hor: Phys. Rev. B 47, 10873 (1993)
12. J. Mort, M. Machonkin, R. Ziolo, D.R. Huffman, M.I. Ferguson: Appl. Phys. Lett. 60, 1735 (1992)
13. R.C. Haddon, A.S. Perel, R.C. Morris, T.T.M. Palstra, A.F. Hebard, R.M. Fleming: Appl. Phys. Lett. 67, 121 (1995)
14. T. Takagi, I. Yamada, A. Sasaki: J. Vac. Sci. Technol. 12, 1128 (1975)
15. Y. Shi, T. Yu, C. Liu, S.N. Li, H.X. Guo, X.J. Fan: Fullerene Sci. Technol. 3, 469 (1995)
16. T. Yu, J.C. Li, F.X. Cai, X.J. Fan, M.S. Ye, R. Chen, W. Wu, N. Xiao, D.C. Tian, W.K. Zhao, Y.L. Fang, A.Y. Kuang: ibid. 2, 223 (1994)
17. W. Allers, U.D. Schwarz, G. Gensterbium, R. Wiesendanger: Appl. Phys. A 59, 11 (1994)
18. Y. Shi, X.J. Fan, H.X. Guo, Q. Fu: Solid State Commun. 99, 445 (1996)
19. K.M. Chen, Y.Q. Jia, S.X. Jin, K. Wu, X.D. Zhang, W.B. Zhao, C.Y. Li, Z.N. Gu: J. Phys. Condens. Matter 7, L201 (1995)
20. B.L. Sharma, R.K. Purohit: Semiconductor Heterojunctions (pergamon, Oxford 1974)
21. R.L. Anderson: Solid-State Electron. 5, 341 (1962)
22. T.R. Ohno, Y. Chen, S.E. Harvey, G.H. Kroll, J.H. Weaver, R.E. Haufler, R.E. Smalley: Phys. Rev. B 44, 13747 (1991)
23. V.I. Srdanov, C.H. Lee, N.S. Sariciftci: Thin Solid Films 257, 233 (1995)
24. N.S. Sariciftci, D. Braun, C. Zhang, V.I. Srdanov, A.J. Heeger, G. Stucky, F. Wudl: Appl. Phys. Lett. 62, 585 (1993)
25. A.F. Hebard, O. Zhou, Q. Zhong, R.M. Fleming, R.C. Haddon: Thin Solid Films 257, 147 (1995)
26. Y. Shi, C.M. Xiong, M.S. Ye, X.S. Wang, C.H. Lei, H.X. Guo, X.J. Fan: Fullerene Sci. Technol. (submitted)