Room-temperature continuous wave operation of all-AlGaAs visible (∼700 nm) vertical-cavity surface emitting lasers

Electronics Letters

Volumn 32, Issue 21, 1996, Pages 1986-1987

  Hou, H Q ^a   Hagerott Crawford, M ^a   Hickman, R J ^a   Hammons, B E ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

Vertical cavity surface emitting lasers; Visible semiconductor lasers

Indexed keywords

CONTINUOUS WAVE LASERS; ELECTRIC CURRENTS; METALLORGANIC VAPOR PHASE EPITAXY; OXIDATION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS;

SELECTIVE OXIDATION; SERIES RESISTANCE; THRESHOLD CURRENT; VERTICAL CAVITY SURFACE EMITTING LASERS;

SEMICONDUCTOR LASERS;

EID: 0030261638     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19961337     Document Type: Article

References (8)

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7. HOU, H.Q., CHUI, H.C., CHOQUETTE, K.D., HAMMONS, B.E., BREILAND, W.G., and GEIB, K.M.: 'Highly uniform and reproducible vertical-cavity surface-emitting lasers grown by metalorganic vapor phase epitaxy with in situ reflectometry', IEEE Photonics Technol. Lett., 1996, 8
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