Ar plasma-induced damage in AlGaAs

Journal of the Electrochemical Society

Volumn 143, Issue 9, 1996, Pages

  Stradtmann, R R ^a   Lee, J W ^a   Abenathy, C R ^a,c   Pearton, S J ^a,c   Hobson, W S ^b,c  

^a University of Florida   (United States)

^b LUCENT TECHNOLOGIES   (United States)

^c ELECTROCHEMICAL SOCIETY

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; CHARGE CARRIERS; CRYSTAL DEFECTS; ELECTRIC CONDUCTIVITY; ELECTRIC DISCHARGES; ELECTRIC VARIABLES MEASUREMENT; ELECTRON CYCLOTRON RESONANCE; ELECTRON ENERGY LEVELS; ION BOMBARDMENT; IONS; PLASMAS; SEMICONDUCTOR DEVICE STRUCTURES;

ACTIVE DEEP LEVELS; DEEP ELECTRON TRAPS; DEEP HOLE TRAPS; ION DENSITY; ION ENERGY; PLASMA DAMAGE;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 0030247087     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1837093     Document Type: Article

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