Real time in situ monitoring of surfaces during glow discharge processing: NH3 and H2 plasma passivation of GaAs

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 13, Issue 2, 1995, Pages 258-267

  Aydil, Eray S ^a   Zhou, Zhen H ^a   Gottscho, Richard A ^a   Chabal, Yves J ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BONDS; ELECTRONIC PROPERTIES; FOURIER TRANSFORM INFRARED SPECTROSCOPY; GLOW DISCHARGES; IMPURITIES; MONITORING; PASSIVATION; PHOTOLUMINESCENCE; REFLECTION; SEMICONDUCTOR PLASMAS; SURFACES; TEMPERATURE;

ATTENUATED TOTAL REFLECTION; GLOW DISCHARGE PROCESSING; NATIVE OXIDE CONTAMINATED GALLIUM ARSENIDE SURFACES; PHOTOLUMINESCENCE INTENSITY; PHYSISORBED WATER; PLASMA PASSIVATION;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0029273205     PISSN: 0734211X     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.588361     Document Type: Article

References (45)